An integrated 8-12 GHz fractional-N frequency synthesizer in SiGe BiCMOS for satellite communications

被引:8
作者
Herzel, Frank [1 ]
Osmany, Sabbir A. [1 ]
Hu, Kai [1 ]
Schmalz, Klaus [1 ]
Jagdhold, Ulrich [1 ]
Scheytt, J. Christoph [1 ]
Schrape, Oliver [1 ]
Winkler, Wolfgang [2 ]
Follmann, Ruediger [3 ]
Koether, Dietmar [3 ]
Kohl, Thorsten [3 ]
Kersten, Olaf [3 ]
Podrebersek, Thomas [3 ]
Heyer, Heinz-Volker [4 ]
Winkler, Frank [5 ]
机构
[1] IHP, D-15236 Frankfurt, Oder, Germany
[2] Silicon Radar GmbH, D-15236 Frankfurt, Oder, Germany
[3] IMST GmbH, D-47475 Kamp Lintfort, Germany
[4] Kayser Threde GmbH, D-81379 Munich, Germany
[5] Humboldt Univ, D-10117 Berlin, Germany
关键词
Phase-locked loop; Satellite communication; Phase noise; SiGe; BiCMOS; PVT tolerance; PHASE-NOISE; RF; TECHNOLOGY; CIRCUIT; VCO;
D O I
10.1007/s10470-010-9454-z
中图分类号
TP3 [计算技术、计算机技术];
学科分类号
0812 ;
摘要
We present an integrated fractional-N low-noise frequency synthesizer for satellite applications. By using two integrated VCOs and combining digital and analog tuning techniques, a PLL lock range from 8 to 12 GHz is achieved. Due to a small VCO line tuning gain and optimized charge pump output biasing, the phase noise is low and almost constant over the tuning range. All 16 sub-bands show a tuning range above 900 MHz each, allowing temperature compensation without sub-band switching. This makes the synthesizer robust against variations of the device parameters with process, supply voltage, temperature and aging. The measured phase noise is -87 dBc/Hz and -106 dBc/Hz at 10 kHz and 1 MHz offset, respectively. In integer-N mode, phase noise values down to -98 dBc/Hz at 10 kHz and -111 dBc/Hz at 1 MHz offset, respectively, were measured.
引用
收藏
页码:21 / 32
页数:12
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