A novel partial SOI EDMOS (>800 V) with a buried N-type layer on the double step buried oxide

被引：3

作者：

Wang, Qian ^{[1
,2
]}

Cheng, Xinhong ^{[1
]}

Wang, Zhongjian ^{[1
]}

Xia, Chao ^{[1
,2
]}

Shen, Lingyan ^{[1
,2
]}

Zheng, Li ^{[1
,2
]}

Cao, Duo ^{[1
,2
]}

Yu, Yuehui ^{[1
]}

Shen, DaShen ^{[3
]}

机构：

[1] Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, State Key Lab Funct Mat Informat, Shanghai 200050, Peoples R China

[2] Univ Chinese Acad Sci, Beijing 100049, Peoples R China

[3] Univ Alabama, Dept Elect & Comp Engn, Huntsville, AL 35899 USA

来源：

SUPERLATTICES AND MICROSTRUCTURES | 2015年 / 79卷

基金：

中国国家自然科学基金;

关键词：

Partial silicon-on-insulator; EDMOS; Double-step buried oxide; Breakdown voltage; BREAKDOWN VOLTAGE IMPROVEMENT; P-LAYER; LDMOSFET; DEVICES; TRENCH; TECHNOLOGY; FILM;

D O I：

10.1016/j.spmi.2014.11.026

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

In this paper, a high voltage partial silicon-on-insulator (PSOI) extended drain metal-oxide-semiconductor (EDMOS) field effect transistor with a buried N-type layer (BNL) on the double-step buried oxide (DSBOX) is proposed. Due to the DSBOX, two additional peaks of the electric field are introduced in the drift region, modulating the electric field, achieving a more uniform distribution in the drift, and improving the lateral breakdown voltage (BV). The BNL provides a great population of positive charges on top of the DSBOX and enhances the electric field in the BOX, leading to a higher vertical BV. Moreover, the silicon window provides a thermal conduction path from the active region to the substrate, significantly alleviating the self-heating effect (SHE) in comparison to the conventional SOI-EDMOS (C-SOI). (C) 2014 Elsevier Ltd. All rights reserved.

引用

页码：1 / 8

页数：8

共 24 条

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[Anonymous], SENT US MAN

[2]

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