Hexagonal GaN1-xPx growth by laser-assisted metalorganic chemical vapor deposition

被引：17

作者：

Kikawa, J ^{[1
]}

Yoshida, S ^{[1
]}

Itoh, Y ^{[1
]}

机构：

[1] Furukawa Elect Corp Ltd, Yokohama Res & Dev Labs, Nishi Ku, Yokohama, Kanagawa 2200073, Japan

来源：

JOURNAL OF CRYSTAL GROWTH | 2001年 / 229卷 / 01期

关键词：

characterization; metalorganic vapor phase epitaxy; nitrides; semiconducting III-V materials;

D O I：

10.1016/S0022-0248(01)01047-8

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

The growth of nitride-rich GaN1-xPx using laser-assisted metalorganic chemical vapor deposition (LA-MOCVD) in order to obtain N-rich GaN1-xPx with a larger composition ratio (,v) was tried for the first time. An ArF (193 nm) laser was used for the low temperature decomposition of source gases. Trimethylgallium (TMG), ammonia (NH3) and tertialbutylphosphine (TBP) were used as source gases. As a result, N-rich GaN1-xPx was grown at 800-950 degreesC. A higher growth rate of 30 mum/h was obtained by this method. Using a secondary ion mass spectrometry (SIMS), we confirmed that the P incorporation was about 9% into GaN1-xPx. This composition (x) was higher than that using a conventional MOCVD. Furthermore, the photoluminescence (PL) spectra of GaN1-xPx was measured. It was observed that the peak shift of the GaN1-xPx band-edge emission was over 100 meV compared with that of GaN. This larger peak shift at the band-edge emission was obtained by applying thermal annealing after growth. (C) 2001 Elsevier Science B.V. All rights reserved.

引用

页码：48 / 52

页数：5