Quantum Hall Effect from the Topological Surface States of Strained Bulk HgTe

被引：418

作者：

Bruene, C. ^{[1
,2
]}

Liu, C. X. ^{[1
,2
]}

Novik, E. G. ^{[1
,2
]}

Hankiewicz, E. M. ^{[1
,2
]}

Buhmann, H. ^{[1
,2
]}

Chen, Y. L. ^{[3
]}

Qi, X. L. ^{[3
]}

Shen, Z. X. ^{[3
]}

Zhang, S. C. ^{[3
]}

Molenkamp, L. W. ^{[1
,2
]}

机构：

[1] Univ Wurzburg, Fac Phys & Astron, D-97074 Wurzburg, Germany

[2] Univ Wurzburg, Rontgen Ctr Complex Mat Syst, D-97074 Wurzburg, Germany

[3] Stanford Univ, Dept Phys, Stanford, CA 94305 USA

来源：

PHYSICAL REVIEW LETTERS | 2011年 / 106卷 / 12期

关键词：

SINGLE DIRAC CONE; ELECTRONIC-PROPERTIES; INSULATOR; BI2TE3; WELLS; PHASE;

D O I：

10.1103/PhysRevLett.106.126803

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We report transport studies on a three-dimensional, 70-nm-thick HgTe layer, which is strained by epitaxial growth on a CdTe substrate. The strain induces a band gap in the otherwise semimetallic HgTe, which thus becomes a three-dimensional topological insulator. Contributions from residual bulk carriers to the transport properties of the gapped HgTe layer are negligible at mK temperatures. As a result, the sample exhibits a quantized Hall effect that results from the 2D single cone Dirac-like topological surface states.

引用

页数：4

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