Internal device physics of 1.3μm vertical cavity surface emitting laser

被引：3

作者：

Hangartner, B ^{[1
]}

Piprek, J ^{[1
]}

Streiff, M ^{[1
]}

Odermatt, S ^{[1
]}

Witzigmann, B ^{[1
]}

Witzig, A ^{[1
]}

机构：

[1] Swiss Fed Inst Technol, Integrated Syst Lab, CH-8092 Zurich, Switzerland

来源：

Vertical-Cavity Surface-Emitting Lasers IX | 2005年 / 5737卷

关键词：

VCSEL; tunnel junction; electro-opto-thermal simulation;

D O I：

10.1117/12.584571

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report on the simulation of 1.32 mu m vertical-cavity surface-emitting lasers (VCSELs). The device comprises a tunnel junction for current and optical confinement and features intra-cavity ring contacts. Distributed Bragg reflectors (DBRs) in the GaAs/AlGaAs material system form the optical cavity and are wafer-bonded to InP-based spacers. The active region consists of five InAlGaAS quantum wells (QW). For the simulations, a thermodynamic transport model is used for electrical and thermal calculations while the optical modes are computed by solving the vectorial Helmholtz equation with an finite element (FE) solver. Calibrations show good agreement with measurements and on this basis, electrical benefits of the (FE.) are studied. Moreover, the physics of thermal rollover are analyzed.

引用

页码：132 / 141

页数：10

共 9 条

[1] SPATIAL INTEGRATION OF DIRECT BAND-TO-BAND TUNNELING CURRENTS IN GENERAL DEVICE STRUCTURES [J].

ADAR, R .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1992, 39 (04) :976-981

[2]

Chuang S. L., 2009, PHYS PHOTONIC DEVICE

[3] A NEW RECOMBINATION MODEL FOR DEVICE SIMULATION INCLUDING TUNNELING [J].

HURKX, GAM ;

KLAASSEN, DBM ;

KNUVERS, MPG .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1992, 39 (02) :331-338

[4] High-power 1320-nm wafer-bonded VCSELs with tunnel junctions [J].

Jayaraman, V ;

Mehta, M ;

Jackson, AW ;

Wu, S ;

Okuno, Y ;

Piprek, J ;

Bowers, JE .

IEEE PHOTONICS TECHNOLOGY LETTERS, 2003, 15 (11) :1495-1497

[5]

PIPREK J, 2004, SPIE P, V5349

[6]

Piprek J., 2003, Semiconductor Optoelectronic Devices-Introduction to Physics and Simulation

[7] Computing optical modes for VCSEL device simulation [J].

Streiff, M ;

Witzig, A ;

Fichtner, W .

IEE PROCEEDINGS-OPTOELECTRONICS, 2002, 149 (04) :166-173

[8]

STREIFF M, 2004, OPTO ELECT THERMAL V

[9]

*SYN SWITZ LTD, 2004, DESSIS MAN 2004 ISE

← 1 →