3D Stackable Broadband Photoresponsive InGaAs Biristor Neuron for a Neuromorphic Visual System with Near 1 V Operation

被引:22
作者
Han, Joon-Kyu [1 ]
Sim, Jaeho [1 ]
Geum, Dae-Myeong [1 ]
Kim, Seong Kwang [1 ]
Yu, Ji-Man [1 ]
Kim, Jongmin [2 ]
Kim, Sanghyeon [1 ]
Choi, Yang-Kyu [1 ]
机构
[1] Korea Adv Inst Sci & Technol, Sch EE, Daejeon 34141, South Korea
[2] Korea Adv Nano Fab Ctr KANC, Suwon, South Korea
来源
2021 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM) | 2021年
基金
新加坡国家研究基金会;
关键词
D O I
10.1109/IEDM19574.2021.9720654
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
A photoresponsive InGaAs biristor neuron suitable for neuromorphic visual systems is demonstrated. It receives optical signals, converts them to electrical signals, and simultaneously transmits spiking signals to a neural network. This feature is attractive for an input neuron in spiking neural networks (SNNs). A visible and infrared (IR) light photoresponse with near 1 V operation was achieved thanks to the narrow bandgap energy of the InGaAs. This permits broadband detection with lower energy consumption and higher speed compared to previous Si-based neurons. Furthermore, monolithic 3D integration (M3D) of photoresponsive neurons over the synapses is available to construct a 3D neuromorphic visual system, which also minimizes the interconnect bottleneck because of its inherently low temperature fabrication.
引用
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页数:4
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