Enhancing oxidation rate of 4H-SiC by oxygen ion implantation

被引：7

作者：

Liu, Min ^{[1
,2
]}

Zhang, Shuyuan ^{[1
,2
]}

Yang, Xiang ^{[1
]}

Chen, Xue ^{[1
]}

Fan, Zhongchao ^{[1
,4
]}

Wang, Xiaodong ^{[1
]}

Yang, Fuhua ^{[1
,2
,3
]}

Ma, Chao ^{[5
]}

He, Zhi ^{[5
]}

机构：

[1] Chinese Acad Sci, Inst Semicond, Engn Res Ctr Semicond Integrated Technol, Beijing 100083, Peoples R China

[2] Univ Chinese Acad Sci, Coll Mat Sci & Optoelect Technol, Beijing 100049, Peoples R China

[3] Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, Beijing 100083, Peoples R China

[4] Univ Chinese Acad Sci, Sch Elect Elect & Commun Engn, Beijing 100083, Peoples R China

[5] Chinese Acad Sci, Inst Microelect, Beijing 100029, Peoples R China

来源：

JOURNAL OF MATERIALS SCIENCE | 2019年 / 54卷 / 02期

关键词：

THERMAL-OXIDATION; SILICON-CARBIDE; KINETICS; DEFECTS;

D O I：

10.1007/s10853-018-2921-0

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

In this study, the thermal oxidation rate of oxygen ion (O+) implanted 4H-silicon carbide (SiC) was investigated. And the critical breakdown electric field (E-breakdown) and capacitance-voltage (CV) curve of the grown oxide (SiO2) film were also evaluated. It is found that the thermal SiO2 growth rate on 4H-SiC (0001) face was significantly improved by O+ implantation. E-breakdown test results showed that the unconsumed amorphous and damaged crystalline layer under the grown SiO2 contained defects leading to an inferior critical breakdown field. Thus, in order to obtain a high-quality SiO2 film, the oxidation process should be designed delicately so that the damaged layer by implantation could be fully consumed.

引用

页码：1147 / 1152

页数：6

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