Enhancing oxidation rate of 4H-SiC by oxygen ion implantation

被引：7
|
作者：
Liu, Min [1 ,2 ]
Zhang, Shuyuan [1 ,2 ]
Yang, Xiang [1 ]
Chen, Xue [1 ]
Fan, Zhongchao [1 ,4 ]
Wang, Xiaodong [1 ]
Yang, Fuhua [1 ,2 ,3 ]
Ma, Chao [5 ]
He, Zhi [5 ]
机构：
[1] Chinese Acad Sci, Inst Semicond, Engn Res Ctr Semicond Integrated Technol, Beijing 100083, Peoples R China
[2] Univ Chinese Acad Sci, Coll Mat Sci & Optoelect Technol, Beijing 100049, Peoples R China
[3] Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, Beijing 100083, Peoples R China
[4] Univ Chinese Acad Sci, Sch Elect Elect & Commun Engn, Beijing 100083, Peoples R China
[5] Chinese Acad Sci, Inst Microelect, Beijing 100029, Peoples R China
来源：
JOURNAL OF MATERIALS SCIENCE | 2019年 / 54卷 / 02期
关键词：
THERMAL-OXIDATION; SILICON-CARBIDE; KINETICS; DEFECTS;
D O I：
10.1007/s10853-018-2921-0
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
In this study, the thermal oxidation rate of oxygen ion (O+) implanted 4H-silicon carbide (SiC) was investigated. And the critical breakdown electric field (E-breakdown) and capacitance-voltage (CV) curve of the grown oxide (SiO2) film were also evaluated. It is found that the thermal SiO2 growth rate on 4H-SiC (0001) face was significantly improved by O+ implantation. E-breakdown test results showed that the unconsumed amorphous and damaged crystalline layer under the grown SiO2 contained defects leading to an inferior critical breakdown field. Thus, in order to obtain a high-quality SiO2 film, the oxidation process should be designed delicately so that the damaged layer by implantation could be fully consumed.
引用
收藏
页码：1147 / 1152
页数：6
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