Simulation of Synaptic Coupling of Neuron-Like Generators via a Memristive Device

被引：19

作者：

Gerasimova, S. A. ^{[1
]}

Mikhaylov, A. N. ^{[1
]}

Belov, A. I. ^{[1
]}

Korolev, D. S. ^{[1
]}

Gorshkov, O. N. ^{[1
]}

Kazantsev, V. B. ^{[1
]}

机构：

[1] Lobachevsky State Univ Nizhny Novgorod, Nizhnii Novgorod 603950, Russia

来源：

TECHNICAL PHYSICS | 2017年 / 62卷 / 08期

基金：

俄罗斯科学基金会;

关键词：

ELEMENTS; OXIDE;

D O I：

10.1134/S1063784217080102

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A physical model of synaptically coupled neuron-like generators interacting via a memristive device has been presented. The model simulates the synaptic transmission of pulsed signals between brain neurons. The action on the receiving generator has been performed via a memristive device that demonstrates adaptive behavior. It has been established that the proposed coupling channel provides the forced synchronization with the parameters depending on the memristive device sensitivity. Synchronization modes 1: 1 and 2: 1 have been experimentally observed.

引用

页码：1259 / 1265

页数：7

共 13 条

[1]

Adamatzky A., 2013, Memristor Networks

[2] Experimental study of electrical FitzHugh-Nagumo neurons with modified excitability [J].

Binczak, Stephane ;

Jacquir, Sabir ;

Bilbault, Jean-Marie ;

Kazantsev, Viktor B. ;

Nekorkin, Vladimir I. .

NEURAL NETWORKS, 2006, 19 (05) :684-693

[3] Digital data transmission between neuronlike elements [J].

Dmitriev, A. S. ;

Ryzhov, A. I. .

JOURNAL OF COMMUNICATIONS TECHNOLOGY AND ELECTRONICS, 2010, 55 (04) :429-434

[4] Implementation of adaptive coupling through memristor [J].

Frasca, Mattia ;

Gambuzza, Lucia Valentina ;

Buscarino, Arturo ;

Fortuna, Luigi .

PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 12, NO 1-2, 2015, 12 (1-2) :206-210

[5] Synchronization of optically coupled neural-like oscillators [J].

Gerasimova, S. A. ;

Gelikonov, G. V. ;

Pisarchik, A. N. ;

Kazantsev, V. B. .

JOURNAL OF COMMUNICATIONS TECHNOLOGY AND ELECTRONICS, 2015, 60 (08) :900-903

[6] Resistive switching in metal-insulator-metal structures based on germanium oxide and stabilized zirconia [J].

Gorshkov, O. N. ;

Antonov, I. N. ;

Belov, A. I. ;

Kasatkin, A. P. ;

Mikhaylov, A. N. .

TECHNICAL PHYSICS LETTERS, 2014, 40 (02) :101-103

[7] Synaptic electronics: materials, devices and applications [J].

Kuzum, Duygu ;

Yu, Shimeng ;

Wong, H-S Philip .

NANOTECHNOLOGY, 2013, 24 (38)

[8] Resistive switching and synaptic properties of fully atomic layer deposition grown TiN/HfO2/TiN devices [J].

Matveyev, Yu. ;

Egorov, K. ;

Markeev, A. ;

Zenkevich, A. .

JOURNAL OF APPLIED PHYSICS, 2015, 117 (04)

[9] Emulating the Electrical Activity of the Neuron Using a Silicon Oxide RRAM Cell [J].

Mehonic, Adnan ;

Kenyon, Anthony J. .

FRONTIERS IN NEUROSCIENCE, 2016, 10

[10] Bipolar resistive switching and charge transport in silicon oxide memristor [J].

Mikhaylov, Alexey N. ;

Belov, Alexey I. ;

Guseinov, Davud V. ;

Korolev, Dmitry S. ;

Antonov, Ivan N. ;

Efimovykh, Denis V. ;

Tikhov, Stanislav V. ;

Kasatkin, Alexander P. ;

Gorshkov, Oleg N. ;

Tetelbaum, David I. ;

Bobrov, Alexander I. ;

Malekhonova, Natalia V. ;

Pavlov, Dmitry A. ;

Gryaznov, Evgeny G. ;

Yatmanov, Alexander P. .

MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE MATERIALS, 2015, 194 :48-54

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