Normally-off operation AlGaN/GaN MOS-HEMT with high threshold voltage

被引：38

作者：

Chang, C. -T. ^{[1
]}

Hsu, T. -H. ^{[1
]}

Chang, E. Y. ^{[1
]}

Chen, Y. -C. ^{[1
]}

Trinh, H. -D. ^{[1
]}

Chen, K. J. ^{[2
]}

机构：

[1] Natl Chiao Tung Univ, Dept Mat Sci & Engn, Hsinchu 300, Taiwan

[2] Hong Kong Univ Sci & Technol, Dept Elect & Comp Engn, Kowloon, Hong Kong, Peoples R China

来源：

ELECTRONICS LETTERS | 2010年 / 46卷 / 18期

关键词：

ENHANCEMENT-MODE; PLASMA TREATMENT;

D O I：

10.1049/el.2010.1939

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Normally-off operation AlGaN/GaN high electron mobility transistors have been developed utilising a fluorine-based treatment technique combined with a metal-oxide-semiconductor gate architecture. Threshold voltage as high as 5.1 V was achieved by using an 16 nm-thick Al(2)O(3) gate oxide film. Additionally, the device performed a drain current density of 500 mA/mm and a peak transconductance of 100 mS/mm, which are comparable to the conventional normally-on devices.

引用

页码：1280 / U63

页数：2

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