The aspect ratio effects on the performances of GaN-based light-emitting diodes with nanopatterned sapphire substrates

被引：50

作者：

Kao, Chien-Chih ^{[1
]}

Su, Yan-Kuin ^{[1
,2
]}

Lin, Chuing-Liang ^{[2
]}

Chen, Jian-Jhong ^{[1
]}

机构：

[1] Natl Cheng Kung Univ, Dept Elect Engn, Inst Microelect, Adv Optoelect Technol Ctr, Tainan 701, Taiwan

[2] Kun Shan Univ, Dept Elect Engn, Tainan 710, Taiwan

来源：

APPLIED PHYSICS LETTERS | 2010年 / 97卷 / 02期

关键词：

band structure; edge dislocations; gallium arsenide; gallium compounds; III-V semiconductors; photoluminescence; self-assembly; semiconductor heterojunctions; semiconductor quantum dots; stress relaxation; transmission electron microscopy;

D O I：

10.1063/1.3463471

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The nanopatterned sapphire substrates (NPSSs) with aspect ratio that varied from 2.00 to 2.50 were fabricated by nanoimprint lithography. We could improve the epitaxial film quality and enhance the light extraction efficiency by NPSS technique. In this work, the aspect ratio effects on the performances of GaN-based light-emitting diodes (LEDs) with NPSS were investigated. The light output enhancement of GaN-based LEDs with NPSS was increased from 11% to 27% as the aspect ratio of the NPSS increases from 2.00 to 2.50. Owing to the same improvement of crystalline quality by using various aspect ratios of NPSS, these results indicated that the aspect ratio of the NPSS is strongly related to the light extraction efficiency. (C) 2010 American Institute of Physics. [doi:10.1063/1.3463471]

引用

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