Nonpolar vertical GaN-on-GaN p-n diodes grown on free-standing (10(1)over-bar0) m-plane GaN

被引：23

作者：

Fu, Houqiang ^{[1
]}

Zhang, Xiaodong ^{[2
]}

Fu, Kai ^{[1
]}

Liu, Hanxiao ^{[3
]}

Alugubelli, Shanthan R. ^{[3
]}

Huang, Xuanqi ^{[1
]}

Chen, Hong ^{[1
]}

Baranowski, Izak ^{[1
]}

Yang, Tsung-Han ^{[1
]}

Xu, Ke ^{[2
,4
]}

Ponce, Fernando A. ^{[3
]}

Zhang, Baoshun ^{[2
]}

Zhao, Yuji ^{[1
]}

机构：

[1] Arizona State Univ, Sch Elect Comp & Energy Engn, Tempe, AZ 85287 USA

[2] Chinese Acad Sci, Suzhou Inst Nanotech & Nanobion, Key Lab Nanodevices & Applicat, Suzhou 215123, Peoples R China

[3] Arizona State Univ, Dept Phys, Tempe, AZ 85287 USA

[4] Suzhou Nanowin Sci & Technol Co Ltd, Suzhou 215123, Peoples R China

来源：

APPLIED PHYSICS EXPRESS | 2018年 / 11卷 / 11期

关键词：

LIGHT-EMITTING-DIODES; YELLOW LUMINESCENCE; DOPED GAN; SCHOTTKY; VOLTAGE; KV;

D O I：

10.7567/APEX.11.111003

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report nonpolar vertical GaN-on-GaN p-n diodes grown on rn-plane free-standing substrates. Cathodoluminescence measurements showed that the nonpolar p-GaN had a high quality with very few deep-level states. The device exhibited good rectifying behaviors with a turn-on voltage of 4.0 V, on-resistance of 2.3 m Omega.cm(2), and high on/off ratio of 10(10). The reverse current leakage was described by a trap-assisted space-charge-limited current conduction mechanism. The critical electrical field was calculated to be 2.0 MV/cm without field plates or edge termination. These results pave the way for development of novel nonpolar power electronics and polarization-engineering-related advanced power devices. (C) 2018 The Japan Society of Applied Physics

引用

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