Silicon photomultipliers radiation damage and recovery via high temperature annealing

被引：9

作者：

Tsang, T. ^{[1
]}

机构：

[1] Brookhaven Natl Lab, Instrumentat Div, Upton, NY 11973 USA

来源：

JOURNAL OF INSTRUMENTATION | 2018年 / 13卷

关键词：

Photon detectors for UV visible and IR photons (solid-state) (PIN diodes; APDs; Si-PMTs; G-APDs; CCDs; EBCCDs; EMCCDs etc); Radiation damage evaluation methods; Radiation damage to detector materials (solid state); HARDNESS TESTS;

D O I：

10.1088/1748-0221/13/10/P10019

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

The performance of Silicon Photomultipliers (SiPMs) from several vendors are characterized before and after exposure of up to 10(10) neutron/cm(2) dosage. Collectively, we firmly established that the typical orders of magnitude increase in dark current upon neutron irradiation can be lowered substantially after processing them with a thermal annealing procedure, and single-photon detection are to some extent recovered at room temperature. Moreover, we found no significant difference on neutron damaged behavior when SiPMs are irradiated at room temperature or in liquid nitrogen.

引用

页数：10

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