Effect of growth rate on the size, composition, and optical properties of InAs/GaAs quantum dots grown by molecular-beam epitaxy

被引：187
作者：
Joyce, PB
Krzyzewski, TJ
Bell, GR
Jones, TS [1 ]
Malik, S
Childs, D
Murray, R
机构：
[1] Univ London Imperial Coll Sci Technol & Med, Dept Chem, Ctr Elect Mat & Devices, London SW7 2AY, England
[2] Univ London Imperial Coll Sci Technol & Med, Dept Phys, Ctr Elect Mat & Devices, London SW 2BZ, England
来源：
PHYSICAL REVIEW B | 2000年 / 62卷 / 16期
关键词：
D O I：
10.1103/PhysRevB.62.10891
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The effect of the InAs deposition rate on the properties of InAs/GaAs quantum dots (QD's) grown on GaAs(001) substrates by molecular-beam epitaxy has been studied by scanning tunneling microscopy (STM) and photoluminescence (PL). PL studies performed on GaAs capped QD samples show that the emission wavelength increases with decreasing growth rate, reaching a maximum around 1.3 mum, with the linewidth decreasing from 44 to 27 meV. STM studies on uncapped dots show that the number density, total QD volume, and size fluctuation all decrease significantly as the growth rate is reduced. We deduce that the composition of the dots is also dependent on the growth rate, the indium fraction being highest at the lowest growth rates. The shifts in the emission wavelength and linewidth correlate with changes in the QD size, size distribution, and composition.
引用
收藏
页码：10891 / 10895
页数：5
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