Silicon nano-wires grown at low temperature

被引：4

作者：

Niu, JJ

Sha, J

Wang, L

Ji, YJ

Yang, DR

机构：

[1] Zhejiang Univ, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R China

[2] Zhejiang Univ, Dept Phys, Hangzhou 310027, Peoples R China

来源：

PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES | 2005年 / 27卷 / 03期

基金：

中国国家自然科学基金;

关键词：

nano wires; silicon; low temperature;

D O I：

10.1016/j.physe.2004.12.014

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Quantities of crystalline array-orderly silicon nano-wires (SiNWs) were fabricated using chemical-vapor-deposition (CVD) method at low temperature (550-400 degrees C). In the experiments, the decreasing temperature process was used. By means of transmission electron spectroscopy, X-ray diffraction and Raman spectroscopy, it was found that the SiNWs were well crystallized. Finally, the growth mechanism of the SiNWs during the decreasing process was discussed. (c) 2005 Elsevier B.V. All rights reserved.

引用

收藏

页码：309 / 313

页数：5

相关论文

共 23 条

[1] Rational growth of highly oriented amorphous silicon nanowire films [J].

Chen, XH ;

Xing, YJ ;

Xu, J ;

Xiang, J ;

Yu, DP .

CHEMICAL PHYSICS LETTERS, 2003, 374 (5-6) :626-630

[2] Effects of ambient pressure on silicon nanowire growth [J].

Fan, XH ;

Xu, L ;

Li, CP ;

Zheng, YF ;

Lee, CS ;

Lee, ST .

CHEMICAL PHYSICS LETTERS, 2001, 334 (4-6) :229-232

[3] The growth mechanism of silicon nanowires and their quantum confinement effect [J].

Feng, SQ ;

Yu, DP ;

Zhang, HZ ;

Bai, ZG ;

Ding, Y .

JOURNAL OF CRYSTAL GROWTH, 2000, 209 (2-3) :513-517

[4] Hyperfine structure of the electron spin resonance of phosphorus-doped Si nanocrystals [J].

Fujii, M ;

Mimura, A ;

Hayashi, S ;

Yamamoto, Y ;

Murakami, K .

PHYSICAL REVIEW LETTERS, 2002, 89 (20) :206805-206805

[5]

Konstantinovic MJ, 2002, PHYS REV B, V66, DOI 10.1103/PhysRevB.66.161311

[6] Growth characteristics of silicon nanowires synthesized by vapor-liquid-solid growth in nanoporous alumina templates [J].

Lew, KK ;

Redwing, JM .

JOURNAL OF CRYSTAL GROWTH, 2003, 254 (1-2) :14-22

[7] Synthesis of silicon nanowires using AuPd nanoparticles catalyst on silicon substrate [J].

Liu, ZQ ;

Pan, ZW ;

Sun, LF ;

Tang, DS ;

Zhou, WY ;

Wang, G ;

Qian, LX ;

Xie, SS .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 2000, 61 (07) :1171-1174

[8] Silicon quantum-wires arrays synthesized by chemical vapor deposition and its micro-structural properties [J].

Lu, M ;

Li, MK ;

Kong, LB ;

Guo, XY ;

Li, HL .

CHEMICAL PHYSICS LETTERS, 2003, 374 (5-6) :542-547

[9]

Niu J, 2004, JPN J APPL PHYS 1, V43, P4460, DOI [10.1143/JJAP.43.4460, 10.1143/jjap.43.4460]

[10] Silicon nanowires fabricated by thermal evaporation of silicon monoxide [J].

Niu, JJ ;

Sha, J ;

Yang, DR .

PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2004, 23 (1-2) :131-134