Influence of near-surface graded-gap layers on electrical characteristics of MIS-structures based on MBE grown HgCdTe

被引：12

作者：

Voitsekhovskii, A. V. ^{[1
]}

Nesmelov, S. N. ^{[1
]}

Dzyadukh, S. M. ^{[1
]}

Varavin, V. S. ^{[2
]}

Dvoretskii, S. A. ^{[2
]}

Mikhailov, N. N. ^{[2
]}

Sidorov, Yu G. ^{[2
]}

Yakushev, M. V. ^{[2
]}

机构：

[1] Tomsk VV Kuibyshev State Univ, Tomsk 634050, Russia

[2] Russian Acad Sci, Inst Semicond Phys, Siberian Branch, Novosibirsk 630090, Russia

来源：

OPTO-ELECTRONICS REVIEW | 2010年 / 18卷 / 03期

关键词：

HgCdTe; MIS-structures; graded-gap layer;

D O I：

10.2478/s11772-010-1029-4

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The paper examines influence of near-surface graded-gap layers on electrical characteristics of MIS-structures fabricated on heteroepitaxial Hg(1-x)Cd(x)Te films grown by molecular beam epitaxy (MBE). Two types of insulators, i.e., two-layer SiO(2)/Si(3)N(4) and anodic oxide films were used. As it is seen from the depth and width of the valley on the C-V characteristics, the capacitance is found to vary in a wide range, in contrast to the structures without graded-gap layers. It is shown that the graded-gap layer under MIS-structures with x = 0.22 effectively reduces the tunnelling generation via deep levels and increases a lifetime of minority carriers in the space charge region and its differential resistance. The properties of the HgCdTe-insulator interfaces are studied.

引用

页码：259 / 262

页数：4