Comparative study of porous amorphous a-Si1-xCx films and a-Si1-xCx membranes on structural and luminescence properties

被引：10

作者：

Boukezzata, A. ^{[1
]}

Nezzal, G. ^{[2
]}

Guerbous, L. ^{[3
]}

Keffous, A. ^{[1
]}

Gabouze, N. ^{[1
]}

Belkacem, Y. ^{[1
]}

Manseri, A. ^{[1
]}

Brighet, A. ^{[4
]}

Kechouane, M. ^{[4
]}

Menari, H. ^{[1
]}

机构：

[1] Frantz FANON, Silicon Technol Dev Unit UDTS, Algiers, Algeria

[2] Houari Boumed Univ USTHB, Chem & Mech Fac, Algiers, Algeria

[3] Algerian Nucl Res Ctr CRNA, Algiers, Algeria

[4] Houari Boumed Univ USTHB, Fac Phys, Algiers, Algeria

来源：

JOURNAL OF LUMINESCENCE | 2011年 / 131卷 / 06期

关键词：

Silicon carbide; Porous film; Electrochemical; Membrane; SILICON-CARBIDE; RAMAN-SCATTERING; PHOTOLUMINESCENCE; FABRICATION; MECHANISM;

D O I：

10.1016/j.jlumin.2011.02.029

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

Electrochemical etching of amorphous SIC in fluoride solution was studied. Anodic dissolution and passivation are observed for p-type electrodes under dark illumination. The dissolution of p-type a-Si1-xCx is found to be under mixed transport/kinetic control; the diffusion current is of first order in fluoride concentration. Porous etching was not observed in this case. The surface finish of 6H-SiC depends on the experimental conditions; both uniform and porous etching is observed. In this paper, we report the formation of porous p-type amorphous SIC (a-Si1-xCx) films, elaborated previously by DC magnetron sputtering and analyze the porous layers (PSC) using scanning electron microscopy, spectrophotometer and photoluminescence. The crystal structures and the preparation conditions of porous SiC are shown to have an effect on the structural and electrical properties of the material obtained. SEM observation indicates that the porous a-Si1-xCx layers have shown some specific feature; a semi-cylindrical structure of the porous network has been observed. (C) 2011 Elsevier B.V. All rights reserved.

引用

页码：1184 / 1188

页数：5

共 50 条

[21] Structural variations of Si1−xCx and their light absorption controllability [J].

Jihyun Moon ;

Seung Jae Baik ;

Byungsung O ;

Jeong Chul Lee .

Nanoscale Research Letters, 7

[22] Influence of the substrate conductivity type on the electroluminescence properties of PP plus IN and PIN plus N diodes based on amorphous silicon carbide (a-Si1-xCx:H) / crystalline silicon (c-Si) heterostructures [J].

Ramos-Serrano, J. R. ;

Meneses, M. ;

Morales, A. ;

Torres, A. ;

Flores, J. ;

Moreno, M. .

JOURNAL OF ALLOYS AND COMPOUNDS, 2024, 985

[23] Photoluminescent properties of oxidized stochiometric and carbon-rich amorphous Si1-xCx:H films [J].

Vasin, A. V. ;

Ishikawa, Y. ;

Rusavsky, A. V. ;

Nazarov, A. N. ;

Konchitz, A. A. ;

Lysenko, V. S. .

SEMICONDUCTOR PHYSICS QUANTUM ELECTRONICS & OPTOELECTRONICS, 2015, 18 (01) :63-70

[24] Investigation of Al-a-Si1-xCx interface [J].

Kleps, I ;

Angelescu, A .

SURFACE SCIENCE, 2001, 482 :771-775

[25] Preparation of amorphous Si1-xCx (0≤x≤1) films by alternate deposition of Si and C thin layers using a dual magnetron sputtering source [J].

Kikuchi, N ;

Kusano, E ;

Tanaka, T ;

Kinbara, A ;

Nanto, H .

SURFACE & COATINGS TECHNOLOGY, 2002, 149 (01) :76-81

[26] Crystallisation of magnetron sputtered amorphous Si1-xCx films (x=1/3) studied by grazing incidence X-ray diffractometry [J].

Gruber, Wolfgang ;

Najafabadi, Hessam Hadjiamini ;

Geckle, Udo ;

Bruns, Michael ;

Schmidt, Harald .

PHILOSOPHICAL MAGAZINE, 2010, 90 (29) :3855-3865

[27] Characterization of Si1-xCx:H thin films deposited by PECVD for SiCOI heterojuntion fabrication [J].

Forhan, Neisy A. E. ;

Fantini, Marcia C. A. ;

Pereyra, Ines .

JOURNAL OF THE BRAZILIAN CHEMICAL SOCIETY, 2006, 17 (06) :1158-1162

[28] Structural characterization of Si1-xCx nanolayers synthesized by C Implantation into SiO2/Si [J].

dos Reis, R. M. S. ;

Maltez, R. L. ;

Boudinov, H. .

MICROELECTRONICS TECHNOLOGY AND DEVICES - SBMICRO 2011, 2011, 39 (01) :95-101

[29] Annealing of nm-thin Si1-xCx/SiC multilayers [J].

Kuenle, Matthias ;

Janz, Stefan ;

Nickel, Klaus Georg ;

Heidt, Anna ;

Luysberg, Martina ;

Eibl, Oliver .

SOLAR ENERGY MATERIALS AND SOLAR CELLS, 2013, 115 :11-20

[30] Composition-Dependent Structural and Electronic Properties of α-(Si1-xCx)3N4 [J].

Xu, M. ;

Xu, S. ;

Duan, M. Y. ;

Delanty, M. ;

Jiang, N. ;

Li, H. S. ;

Kwek, L. C. ;

Ostrikov, K. .

JOURNAL OF PHYSICAL CHEMISTRY C, 2011, 115 (05) :2448-2453

← 1 2 3 4 5 →