Quantum confinement in germanium nanocrystal thin films

被引:14
作者
Holman, Zachary C. [1 ]
Kortshagen, Uwe R. [1 ]
机构
[1] Univ Minnesota, Dept Mech Engn, Minneapolis, MN 55455 USA
来源
PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS | 2011年 / 5卷 / 03期
关键词
nanocrystals; germanium; band gap; absorption; SILICON NANOCRYSTALS; DOTS; GE; PHOTOLUMINESCENCE; SUPERLATTICES; MATRICES; GAP;
D O I
10.1002/pssr.201105031
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Thin films of semiconductor nanocrystals with tunable optical properties are promising materials for new device applications, but progress has been slow for group IV materials. We report absorption measurements near the absorption edge of thin films of germanium nanocrystals synthesized in a plasma and impacted onto substrates. Band gaps extracted from the absorption data vary from the near-bulk value of 0.73 eV for 9.0 nm nanocrystals to over 1.0 eV for 4.7 nm nanocrystals. These values are comparable to those reported for isolated, non-interacting germanium nanocrystals, indicating minimal loss of quantum confinement upon dense film formation. (C) 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
引用
收藏
页码:110 / 112
页数:3
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