Carbon nanotube based dielectric for enhanced RF MEMS reliability

被引：16

作者：

Bordas, Chloe ^{[1
]}

Grenier, Katia ^{[1
]}

Dubuc, David ^{[1
]}

Flahaut, Emmanuel ^{[2
]}

Pacchini, Sebastien ^{[1
]}

Paillard, Mathieu ^{[3
]}

Cazaux, Jean-Louis ^{[3
]}

机构：

[1] CNRS, LAAS, 7 Av Colonel Roche, F-31077 Toulouse 4, France

[2] CIRIMAT, UPS, Toulouse, France

[3] Alcatel Alenia Space, F-31100 Toulouse, France

来源：

2007 IEEE/MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM DIGEST, VOLS 1-6 | 2007年

关键词：

carbon nanotube; dielectric charging; reliability; RF MEMS; switches;

D O I：

10.1109/MWSYM.2007.380449

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper presents the fabrication and experimental results of capacitive MEM switches with a carbon nanotubes (CNT) based dielectirlic for the first time to our knowledge. Double wall nanotubes (DWNT) have been incorporated in the switch silicon nitride dielectric to modify its properties regarding the charging effect. The impact of the CNT density on the MEMS reliability has been demonstrated: a switch lifetime enhancement greater than two orders of magnitude has been achieved.

引用

页码：375 / 378

页数：4

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