Application of back-side laser technique on failure analysis

被引：0

作者：

Hoe, Wilson Lee Cheng ^{[1
]}

De Lin, Ren ^{[1
]}

Chong, Chee Hong ^{[1
]}

Lin, Coswin ^{[1
]}

机构：

[1] United Microelect Corp Ltd, 3 Pasir Ris Dr 12, Singapore 519528, Singapore

来源：

IPFA 2007: PROCEEDINGS OF THE 14TH INTERNATIONAL SYMPOSIUM ON THE PHYSICAL & FAILURE ANALYSIS OF INTEGRATED CIRCUITS | 2007年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The application of backside emission and laser technique (TIVA/OBIRCH) had been widely used in the semiconductor industry. This paper will discuss the usage of backside laser damage method to aid in this technique on localizing the failure spot. Two applications on backside laser; 1.Memory scramble verification and 2. Yield loss scenario using backside laser to verify the failure hypothesis will also be discussed.

引用

页码：273 / +

页数：2