Sol-gel erbium-doped silica-hafnia planar and channel waveguides

被引：14

作者：

Gonçalves, RR ^{[1
]}

Carturan, G ^{[1
]}

Zampedri, L ^{[1
]}

Ferrari, M ^{[1
]}

Armellini, C ^{[1
]}

Chiasera, A ^{[1
]}

Mattarelli, M ^{[1
]}

Moser, E ^{[1
]}

Montagna, M ^{[1
]}

Righini, GC ^{[1
]}

Pelli, S ^{[1
]}

Conti, GN ^{[1
]}

Ribeiro, SJL ^{[1
]}

Messaddeq, Y ^{[1
]}

Minotti, A ^{[1
]}

Foglietti, V ^{[1
]}

Portales, H ^{[1
]}

机构：

[1] Univ Trent, Dipartimento Ingn Mat, I-38050 Trent, Italy

来源：

RARE-EARTH-DOPED MATERIALS AND DEVICES VII | 2003年 / 4990卷

关键词：

erbium; silica-hafnia; sol-gel planar waveguides; channel waveguides; luminescence;

D O I：

10.1117/12.478340

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Erbium activated SiO2 -HfO2 planar waveguides, doped with Er3+ concentrations ranging from 0.01 to 4 mol%, were prepared by sol-gel method. The films were deposited on v-SiO2 and silica-on-silicon substrates using dip-coating technique. The waveguides show high densification degree, effective intermingling of the two film components; and uniform surface morphology. The waveguide deposited on silica-on-silicon substrates shows one single propagation mode at 1.5mum, with a confinement coefficient of 0.81 and an attenuation coefficient of 0.8 dB/cm at 632.8nm.. Emission in the C-telecommunication band was observed at room temperature for all the samples upon continuous-wave excitation at 980 nm or 514.5 nm. The shape of the emission band corresponding to the I-4(13/2) --> I-4(15/2) transition is found to be almost independent both on erbium content and excitation wavelength, with a FWHM between 44 and 48 rum, The I-4(13/2) level decay curves presented a single-exponential profile; with a lifetime ranging between 1.1 - 6.6 ms; depending on the erbium concentration. Infrared to visible upconversion luminescence upon continuous-wave excitation. at 980 nm. was observed for all the samples. Channel waveguide in rib configuration was obtained by etching-the active film in order to have a well confined mode at 1.5 mum.

引用

页码：111 / 120

页数：10

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