Superconductor-to-insulator transition and transport properties of underdoped YBa2Cu3Oy crystals

被引：57

作者：

Semba, K ^{[1
]}

Matsuda, A ^{[1
]}

机构：

[1] NTT, Basic Res Labs, Atsugi, Kanagawa 2430198, Japan

来源：

PHYSICAL REVIEW LETTERS | 2001年 / 86卷 / 03期

关键词：

D O I：

10.1103/PhysRevLett.86.496

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

The carrier-concentration-driven superconductor-to-insulator (SI) transition as well as transport properties in underdoped YBa2Cu3Oy twinned crystals is studied. The SI transition takes place at y similar or equal to 6.3, carrier concentration n(H)(SI) similar or equal to 3 x 10(20) cm(-3), anisotropy rho (c)/rho (ab) similar or equal to 10(3), and the threshold resistivity rho (SI)(ab) similar to 0.8 m Omega cm which corresponds to a critical sheet resistance h/4e(2) similar or equal to 6.5 k Omega per CuO2 bilayer. The evolution of a carrier, n(H) proportional to y - 6.2, is clearly observed in the underdoped region. The resistivity and Hall coefficient abruptly acquire strong temperature dependence at y similar or equal to 6.5 indicating a radical change in the electronic state.

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页码：496 / 499

页数：4

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