A 1.9GHz low voltage CMOS power amplifier for medium power RF applications

被引：15

作者：

Giry, A ^{[1
]}

Fournier, JM ^{[1
]}

Pons, M ^{[1
]}

机构：

[1] STMicorelectronics, F-38926 Crolles, France

来源：

2000 IEEE RADIO FREQUENCY INTEGRATED CIRCUITS (RFIC) SYMPOSIUM, DIGEST OF PAPERS | 2000年

关键词：

D O I：

10.1109/RFIC.2000.854430

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper describes the design methodology and measured performances of a monolithic two-stage RF power amplifier realized in a 0.35 mum CMOS technology. Under 2.5V supply, good linearity is achieved and an output power of 23.5dBm with an associated PAE of 35% is obtained st 19GHz. The obtained performances give an insight into CMOS potentialities for medium power RF amplification.

引用

页码：121 / 124

页数：4