Infrared absorption in p-type SiGe/Si quantum wells: Intersubband transition and free carrier contributions

被引：3
|
作者：
Zanier, S [1 ]
Guldner, Y [1 ]
Berroir, JM [1 ]
Vieren, JP [1 ]
Sagnes, I [1 ]
Campidelli, Y [1 ]
Badoz, PA [1 ]
机构：
[1] CTR NATL ETUD TELECOMMUN,CNS,F-38243 MEYLAN,FRANCE
来源：
SOLID-STATE ELECTRONICS | 1996年 / 40卷 / 1-8期
关键词：
D O I：
10.1016/0038-1101(95)00230-8
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Infrared absorption has been investigated in high quality p-type SiGe/Si multiple quantum wells grown by UHV-CVD. Both intersubband and free carrier absorptions have been quantitatively analyzed using a modified Drude model, and their relative contributions to the total absorbance have been determined as a function of polarization and doping level. The absorption coefficients have been deduced for radiation electric field along the growth axis and parallel to the plane of the layers.
引用
收藏
页码：123 / 126
页数：4
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