Crystal-orientation controlled epitaxial CeO2 dielectric thin films on Si(100) substrates using pulsed laser deposition

被引：30

作者：

Kang, JF ^{[1
]}

Liu, XY

Lian, GJ

Zhang, ZH

Xiong, GC

Guan, XD

Han, RQ

Wang, YY

机构：

[1] Peking Univ, Inst Microelect, Beijing 100871, Peoples R China

[2] Peking Univ, Dept Phys, State Key Lab Artificial Microstruct & Mesoscop P, Beijing 100871, Peoples R China

来源：

MICROELECTRONIC ENGINEERING | 2001年 / 56卷 / 1-2期

关键词：

CeO2 thin films; epitaxial growth; growth orientation; structural and electrical characteristics; pulsed laser deposition;

D O I：

10.1016/S0167-9317(00)00526-8

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Cerium oxide (CeO2) is the potential dielectric candidate for the Si-based devices due to its stable chemical properties, high dielectric constant and good lattice match with silicon. In this paper, the impacts of process conditions on the structural and electrical characteristics of CeO2 thin films deposited on Si(100) substrates have been studied. Epitaxial CeO2 thin films with different crystal orientations on Si(100) substrates have been grown by pulsed laser deposition (PLD). The structural and electrical characteristics of CeO2 thin films have been characterized by x-ray diffraction (XRD), atomic force microscopy (AFM), and high frequency capacitance-voltage measurements (C-V). (C) 2001 Elsevier Science B.V. All rights reserved.

引用

页码：191 / 194

页数：4

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