Fabrication of monolithically-integrated InAlAs/InGaAs/InP HEMTs and InAs/AlSb/GaSb resonant interband tunneling diodes

被引：9

作者：

Fay, P ^{[1
]}

Jiang, L

Xu, Y

Bernstein, GH

Chow, DH

Schulman, JN

Dunlap, HL

De Los Santos, HJ

机构：

[1] Univ Notre Dame, Dept Elect Engn, Notre Dame, IN 46556 USA

[2] HRL Labs, LLC, Malibu, CA 90265 USA

[3] Hughes Space & Commun Co, Los Angeles, CA 90009 USA

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2001年 / 48卷 / 06期

关键词：

aluminum antimonide; gallium antimonide; high electron mobility transistor (HEMT); indium arsenide; indium phosphide; monolithic integration; resonant tunneling; resonant tunneling diode (RTD);

D O I：

10.1109/16.925263

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The integration of InAs/AlSb/GaSb resonant interband tunneling diodes (RITDs) with InAlAs/InGaAs/InP high electron mobility transistors (HEMTs) is reported. The integrated devices exhibit nearly identical performance to discrete control devices from de through microwave frequencies. RITDs with peak current densities of 24.5 kA/cm(2) and peak voltages of 0.12 V have been demonstrated for devices with 1.2-nm thick AlSb barriers. HEMTs with 0.2-mum gates have been fabricated, and f(t)s of 127 GHz and f(max)s of 183 GHz have been obtained. To the authors' knowledge, this is the first report of the monolithic integration of RITDs with HEMTs on InP.

引用

页码：1282 / 1284

页数：3

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