HIGH-ELECTRON-MOBILITY In0.53Ga0.47As/In0.8Ga0.2As COMPOSITE-CHANNEL MODULATION-DOPED STRUCTURES GROWN BY METAL-ORGANIC VAPOR-PHASE EPITAXY

被引：0

作者：

Sugiyama, Hiroki ^{[1
]}

Matsuzaki, Hideaki ^{[1
]}

Yokoyama, Haruki ^{[1
]}

Enoki, Takatomo ^{[1
]}

机构：

[1] NTT Corport, NTT Photon Labs, Kanagawa 2430198, Japan

来源：

2010 22ND INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS (IPRM) | 2010年

关键词：

HEMTS; LAYERS;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Metal-organic vapor-phase epitaxy (MOVPE) growth of In-rich InxGa1-xAs on InP was investigated as a way to obtain extremely high electron mobility in modulation-doped (MD) structures. High-quality In0.53Ga0.47As/In0.8Ga0.2As composite-channel (CC) MD structures were successfully grown without significant lowering of growth temperature. The room-temperature electron mobility in the CC MD reached 150,000 cm(2)/Vs at the sheet carrier concentration (Ns) of 2.1x10(12) cm(-2), which is one of the highest ever reported in MOVPE-grown InP-based InGaAs/InAlAs MD structures.

引用

页数：4

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