Molecular beam epitaxy growth and photoluminescence study of room temperature 1.31 μm (InyGa1-yAs/GaAs1-x Sbx)/ GaAs bilayer quantum wells

被引：5
作者：
Niu, ZC [1 ]
Xu, XH [1 ]
Ni, HQ [1 ]
Xu, YQ [1 ]
He, ZH [1 ]
Han, Q [1 ]
Wu, RH [1 ]
机构：
[1] Chinese Acad Sci, Inst Semicond, Natl Lab Superlattice & Microstruct, Beijing 100083, Peoples R China
来源：
JOURNAL OF CRYSTAL GROWTH | 2005年 / 278卷 / 1-4期
关键词：
bilayer quantum well; photoluminescence; MBE; GaAs1-x; Sb-x/ln(y)Ga(1-y)As;
D O I：
10.1016/j.jcrysgro.2004.12.102
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
Molecular beam epitaxy (MBE) growth of (InyGa1-yAs/GaAs1-xSbx)/GaAs bilayer quantum well (BQW) structures has been investigated. It is evidenced by photo luminescence (PL) that a strong blue shift of the PL peak energy of 47 meV with increasing PL excitation power from 0.63 to 20 mW was observed, indicating type II band alignment of the BQW. The emission wavelength at room temperature from (InyGa1-yAs/GaAs1-xSbx)/GaAs BQW is longer (above 1.2 mu m) than that from InGaAs/GaAs and GaAsSb/GaAs SQW structures (1.1 mu m range), while the emission efficiency from the BQW structures is comparable to that of the SQW. Through optimizing growth conditions, we have obtained room temperature 1.31 mu m wavelength emission from the (InyGa1-yAs/GaAs1-xSbx)/GaAs BQW. Our results have proved experimentally that the GaAs-based bilayer (InyGa1-yAs/GaAs1-xSbx)/GaAs quantum well is a useful structure for the fabrication of near-infrared wavelength optoelectronic devices. (c) 2005 Elsevier B.V. All rights reserved.
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页码：558 / 563
页数：6
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