Optical Emission Analysis of Atmospheric Pressure Methane Plasma Chemical Vapor Deposition

被引:1
作者
Chang, Y. -C. [1 ]
Wu, P. -Y. [1 ]
Jhuang, J. -C. [1 ]
Huang, C. [1 ]
机构
[1] Yuan Ze Univ, Dept Chem Engn & Mat Sci, Chungli 32003, Taiwan
关键词
atmospheric pressure plasma; chemical vapor deposition; film growth; optical emission; DISCHARGE; GROWTH; LAYER; FILMS; COATINGS; BARRIER;
D O I
10.1007/s10812-021-01281-6
中图分类号
O433 [光谱学];
学科分类号
0703 ; 070302 ;
摘要
The distinctive glow features of low-temperature RF CH4/Ar plasma chemical vapor deposition and its correlation with plasma-deposited film characterizations were investigated. The optical emission spectroscopy diagnosis data and deposition results clearly indicated that, during CH4/Ar glow discharge, the CH and C-2 species resulted from the low-energy electron-impact dissociation of CH4 molecules that formed the deposition species, but the strong Ar emission lines were related to nondeposition species such as the argon atom. The results of the optical emission analysis indicated that the possible contribution of atmospheric pressure plasma-deposited film growth occurs primarily owing to a combination of electron-impact-dissociation and ionization.
引用
收藏
页码:1067 / 1075
页数:9
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