Simulations of boundary migration during recrystallization using molecular dynamics

被引：47

作者：

Godiksen, Rasmus B. ^{[1
]}

Trautt, Zachary T.

Upmanyu, Moneesh

Schiotz, Jakob

Jensen, Dorte Juul

Schmidt, Soren

机构：

[1] Tech Univ Denmark, Mat Res Dept, Ctr Fundamental Res, Met Struct Four Dimens,Riso Natl Lab, DK-4000 Roskilde, Denmark

[2] Colorado Sch Mines, Mat Sci Program, Div Engn, STAMP, Golden, CO 80401 USA

[3] Tech Univ Denmark, Dept Phys, NanoDTU, CINF,Danish Natl Res Fdn, DK-2800 Lyngby, Denmark

来源：

ACTA MATERIALIA | 2007年 / 55卷 / 18期

关键词：

molecular dynamics; recrystallization; grain boundary migration;

D O I：

10.1016/j.actamat.2007.07.055

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We have applied an atomistic simulation methodology based on molecular dynamics to study grain boundary migration in crystalline materials, driven by the excess energy of dislocation arrangements. This method is used to simulate recrystallization in metals. The simulations reveal that the migration process is not uniform as assumed in many recrystallization models, but that the grain boundaries migrate in an irregular fashion and exhibit a strong dependence on the local presence of dislocations, which can distort the local migration process significantly. (c) 2007 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.

引用

页码：6383 / 6391

页数：9

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