Semiconductor nanowire lasers

被引:358
作者
Eaton, Samuel W. [1 ]
Fu, Anthony [1 ,2 ]
Wong, Andrew B. [1 ,2 ]
Ning, Cun-Zheng [3 ,4 ]
Yang, Peidong [1 ,2 ,5 ,6 ]
机构
[1] Univ Calif Berkeley, Dept Chem, Berkeley, CA 94720 USA
[2] Univ Calif Berkeley, Lawrence Berkeley Natl Lab, Div Mat Sci, Berkeley, CA 94720 USA
[3] Arizona State Univ, Sch Elect Comp & Energy Engn, Tempe, AZ 85287 USA
[4] Tsinghua Univ, Dept Elect Engn, Beijing 100084, Peoples R China
[5] Kavli Energy NanoSci Inst, Berkeley, CA 94720 USA
[6] Univ Calif Berkeley, Dept Mat Sci & Engn, Berkeley, CA 94720 USA
来源
NATURE REVIEWS MATERIALS | 2016年 / 1卷 / 06期
关键词
LEAD HALIDE PEROVSKITES; AMPLIFIED SPONTANEOUS EMISSION; LOW LASING THRESHOLDS; PHOTONIC CRYSTAL; PHASE SYNTHESIS; PLASMON LASERS; INP NANOWIRES; WAVE-GUIDE; CAVITY; NANOCRYSTALS;
D O I
10.1038/natrevmats.2016.28
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
The discovery and continued development of the laser has revolutionized both science and industry. The advent of miniaturized, semiconductor lasers has made this technology an integral part of everyday life. Exciting research continues with a new focus on nanowire lasers because of their great potential in the field of optoelectronics. In this Review, we explore the latest advancements in the development of nanowire lasers and offer our perspective on future improvements and trends. We discuss fundamental material considerations and the latest, most effective materials for nanowire lasers. A discussion of novel cavity designs and amplification methods is followed by some of the latest work on surface plasmon polariton nanowire lasers. Finally, exciting new reports of electrically pumped nanowire lasers with the potential for integrated optoelectronic applications are described.
引用
收藏
页数:11
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