Growth of Uniform and Self-Aligned InAs Quantum Dots on Vicinal (100) GaAs Substrate by Metal Organic Chemical Vapor Deposition Technique for Laser Applications

被引：0

作者：

Dhawan, Tanuj ^{[1
]}

Tyagi, Renu ^{[2
]}

Bag, Rajesh Kr. ^{[2
]}

Tandon, R. P. ^{[1
]}

机构：

[1] Univ Delhi, Dept Phys & Astrophys, Delhi 110007, India

[2] Solid State Phys Lab, Delhi 110054, India

来源：

INTEGRATED FERROELECTRICS | 2010年 / 119卷

关键词：

InAs; Quantum Dots; GaAs substrate; Atomic Force Microscope; Self-assembled;

D O I：

10.1080/10584587.2010.504412

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Self-assembled InAs quantum dots (QDs) were grown on vicinal (100) GaAs substrate. Effect of InAs coverage and growth temperature was studied to optimize QDs for laser applications. The density and size distribution of QDs varied with the change in InAs coverage and growth temperature. Growth temperature was varied from 400 to 450 degrees C and InAs coverage was varied between 1.40 and 2.35 monolayers (MLs). Optimum growth temperature was found to be 420 degrees C. Density of QDs was first increased and then decreased with increase in InAs coverage. Linear increase in size and height of QDs was observed with increase in both growth temperature and InAs Coverage. It was observed that these two parameters play crucial role in optimization of uniform QDs.

引用

页码：143 / 150

页数：8

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