Growth of Uniform and Self-Aligned InAs Quantum Dots on Vicinal (100) GaAs Substrate by Metal Organic Chemical Vapor Deposition Technique for Laser Applications

被引：0
|
作者：
Dhawan, Tanuj [1 ]
Tyagi, Renu [2 ]
Bag, Rajesh Kr. [2 ]
Tandon, R. P. [1 ]
机构：
[1] Univ Delhi, Dept Phys & Astrophys, Delhi 110007, India
[2] Solid State Phys Lab, Delhi 110054, India
来源：
INTEGRATED FERROELECTRICS | 2010年 / 119卷
关键词：
InAs; Quantum Dots; GaAs substrate; Atomic Force Microscope; Self-assembled;
D O I：
10.1080/10584587.2010.504412
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Self-assembled InAs quantum dots (QDs) were grown on vicinal (100) GaAs substrate. Effect of InAs coverage and growth temperature was studied to optimize QDs for laser applications. The density and size distribution of QDs varied with the change in InAs coverage and growth temperature. Growth temperature was varied from 400 to 450 degrees C and InAs coverage was varied between 1.40 and 2.35 monolayers (MLs). Optimum growth temperature was found to be 420 degrees C. Density of QDs was first increased and then decreased with increase in InAs coverage. Linear increase in size and height of QDs was observed with increase in both growth temperature and InAs Coverage. It was observed that these two parameters play crucial role in optimization of uniform QDs.
引用
收藏
页码：143 / 150
页数：8
相关论文
共 50 条
  • [31] InAs/Sb:GaAs quantum dot solar cells grown by metal organic chemical vapor deposition
    Guimard, Denis
    Bordel, Damien
    Morihara, Ryo
    Wakayama, Yuki
    Tanabe, Katsuaki
    Nishioka, Masao
    Arakawa, Yasuhiko
    2009 34TH IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE, VOLS 1-3, 2009, : 2142 - 2146
  • [32] Growth of N-polar GaN on vicinal sapphire substrate by metal organic chemical vapor deposition
    Can-Tao Zhong
    Guo-Yi Zhang
    Rare Metals, 2014, 33 (06) : 709 - 713
  • [33] Growth of N-polar GaN on vicinal sapphire substrate by metal organic chemical vapor deposition
    Zhong, Can-Tao
    Zhang, Guo-Yi
    RARE METALS, 2014, 33 (06) : 709 - 713
  • [34] Epitaxial Growth of Nano Quantum Dots by Metal-Organic Chemical Vapor Deposition
    Jeong, Weon Guk
    ELECTRONIC MATERIALS LETTERS, 2006, 2 (02) : 73 - 86
  • [35] Growth of N-polar GaN on vicinal sapphire substrate by metal organic chemical vapor deposition
    Can-Tao Zhong
    Guo-Yi Zhang
    Rare Metals, 2014, 33 : 709 - 713
  • [36] 1.3-μm continuous wave lasing of InAs quantum dots with GaInNAs covering layer on GaAs substrate grown by metal-organic chemical vapor deposition
    Kushibe, M.
    Hashimoto, R.
    Ezaki, M.
    Managaki, N.
    Hatakoshi, G.
    Nishioka, M.
    Arakawa, Y.
    2007 PACIFIC RIM CONFERENCE ON LASERS AND ELECTRO-OPTICS, VOLS 1-4, 2007, : 1266 - +
  • [37] Role of thin GaAs interlayer on InAs quantum dots grown on InGaAsP/InP (100) by metalorganic chemical vapor deposition
    Barik, S
    Tan, HH
    Jagadish, C
    Commad 04: 2004 Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, 2005, : 331 - 334
  • [38] Effect of antimony on the density of InAs/Sb:GaAs(100) quantum dots grown by metalorganic chemical-vapor deposition
    Guimard, Denis
    Nishioka, Masao
    Tsukamoto, Shiro
    Arakawa, Yasuhiko
    JOURNAL OF CRYSTAL GROWTH, 2007, 298 (548-552) : 548 - 552
  • [39] Photoluminescence and lasing properties of InAs/GaAs quantum dots grown by metal-organic chemical vapour deposition
    Liang Song
    Zhu Hong-Liang
    Pan Jiao-Qing
    Zhao Ling-Juan
    Wang Lu-Feng
    Zhou Fan
    Shu Hui-Yun
    Bian Jing
    An Xin
    Wang Wei
    CHINESE PHYSICS B, 2008, 17 (11) : 4300 - 4304
  • [40] Lasing at 1.28 μm of InAs-GaAs quantum dots with AlGaAs cladding layer grown by metal-organic chemical vapor deposition
    Tatebayashi, J
    Ishida, M
    Hatori, N
    Ebe, H
    Sudou, H
    Kuramata, A
    Sugawara, M
    Arakawa, Y
    IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, 2005, 11 (05) : 1027 - 1034
12345