TiO2/porous silicon nanocomposite passivation coating for mc-Si wafers

被引：2

作者：

Janene, N. ^{[1
]}

Salem, M. ^{[1
]}

Ben Rabha, M. ^{[1
]}

El Khakani, M. A. ^{[2
]}

Bessais, B. ^{[1
]}

Alawadhi, H. ^{[3
]}

Gaidi, M. ^{[3
]}

机构：

[1] Ctr Rech & Technol Energie, Lab Photovolta, Hammam Lif 2050, Tunisia

[2] INRS Energie Mat & Commun, Inst Natl Rech Sci, Varennes, PQ J3X 1S2, Canada

[3] Univ Sharjah, Dept Appl Phys, Sharjah, U Arab Emirates

来源：

JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS | 2015年 / 26卷 / 03期

关键词：

POROUS SILICON; MULTICRYSTALLINE SILICON; TIO2; NANOCRYSTALS; PHOTOLUMINESCENCE; DEPOSITION; LIFETIME;

D O I：

10.1007/s10854-014-2579-6

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This work reports on passivation effect of solar-grade multicrystalline Si (mc-Si) using a TiO2/porous silicon double coating. For this purpose, TiO2 nanoparticles were deposited onto porous silicon (PS)/mc-Si using pulsed laser ablation of titanium target. The structural and optoelectronic properties of the TiO2/PS treated mc-Si substrates were investigated by X-ray diffraction, Raman spectroscopy, optical spectrometry, photo-conductance and photoluminescence (PL). It was found that the minority carrier lifetime (seff) of the mc-Si wafer could enhance at a nominal thickness of the TiO2 film (nanoparticle sizes). This was attributed to a surface passivation of the mc-Si wafer via TiO2-passivation of the PS film, whose PL intensity improves consequently. An optimal TiO2 thickness of 80 nm was found to give the highest PL intensity and an enhancement of the minority carrier lifetime from 5 ls for untreated mc-Si wafer to about 391 ls for a TiO2/PS treated wafers.

引用

页码：1585 / 1590

页数：6

共 29 条

[1] Angelescu A, 2003, REV ADV MATER SCI, V5, P440
[2] Application of the chemical vapor-etching in polycrystalline silicon solar cells
Ben Rabha, M
Saadoun, M
Boujmil, MF
Bessaïs, B
Ezzaouia, H
Bennaceur, R
[J]. APPLIED SURFACE SCIENCE, 2005, 252 (02) : 488 - 493
[3] BRODSKY MH, 1977, PHYS REV B, V16, P3556, DOI 10.1103/PhysRevB.16.3556
[4] De Haart G. J., 1986, J SOLID STATE CHEM, V61, P135
[5] Electrical properties improvement of multicrystalline silicon solar cells using a combination of porous silicon and vanadium oxide treatment
Derbali, L.
Ezzaouia, H.
[J]. APPLIED SURFACE SCIENCE, 2013, 271 : 234 - 239
[6] Dimitrov D. B., 1998, OPTO-ELECTRON REV, V6, P295
[7] Effective passivation of Si surfaces by plasma deposited SiOx/a-SiNx:H stacks
Dingemans, G.
Mandoc, M. M.
Bordihn, S.
van de Sanden, M. C. M.
Kessels, W. M. M.
[J]. APPLIED PHYSICS LETTERS, 2011, 98 (22)
[8] Surface electronic and structural properties of nanostructured titanium oxide grown by pulsed laser deposition
Fusi, M.
Maccallini, E.
Caruso, T.
Casari, C. S.
Bassi, A. Li
Bottani, C. E.
Rudolf, P.
Prince, K. C.
Agostino, R. G.
[J]. SURFACE SCIENCE, 2011, 605 (3-4) : 333 - 340
[9] Microstructural and optical properties of Ba0.5Sr0.5TiO3 thin film deposited by pulsed laser deposition for low loss waveguide applications
Gaidi, M.
Chaker, M.
Ndione, P. F.
Morandotti, R.
Bessais, B.
[J]. JOURNAL OF APPLIED PHYSICS, 2007, 101 (06)
[10] Guinier A., 1964, THEORIE TECHNIQUE RA, P462

← 1 2 3 →