ESD HBM Discharge Model in RF GaN-on-Si (MIS)HEMTs

被引：6

作者：

Wu, W-M ^{[1
,2
,3
]}

Chen, S-H ^{[1
]}

Sibaja-Hernandez, A. ^{[1
]}

Yadav, S. ^{[1
]}

Peralagu, U. ^{[1
]}

Yu, H. ^{[1
]}

Alian, A. ^{[1
]}

Putcha, V ^{[1
]}

Parvais, B. ^{[1
,4
]}

Groeseneken, G. ^{[1
,2
]}

Ker, M-D ^{[3
]}

Collaert, N. ^{[1
]}

机构：

[1] IMEC, Kapeldreef 75, B-3001 Leuven, Belgium

[2] Katholieke Univ Leuven, Elect Engn ESAT, Leuven, Belgium

[3] Natl Yang Ming Chiao Tung Univ, Hsinchu, Taiwan

[4] VUB, Brussels, Belgium

来源：

2021 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM) | 2021年

关键词：

D O I：

10.1109/IEDM19574.2021.9720581

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report on our extensive experimental and simulation study to understand ESD failure mechanisms in RF GaN-on-Si (MIS)HEMTs. As opposed to ESD clamp transistors in LV CMOS technologies, a mis-correlation between standarddefined HBM ESD robustness and commonly used TLP failure current was observed in GaN (MIS)HEMTs. Using transient HBM IV characteristics, a novel discharge model is proposed to explain the transient discharge mechanism. The TCAD and SPICE simulations confirmed that the observed mis-correlation between TLP and HBM is attributed to 2DEG channel resistance modulation in response to HBM ESD transient voltage waveforms.

引用

页数：4