Distribution of nonequilibrium carriers in the region of a p-n junction under various photogeneration conditions

被引：0

作者：

Kuz'menko, A. V. ^{[1
]}

Tver'yanovich, Yu. S. ^{[2
]}

机构：

[1] Admiral Kuznetsov Naval Acad, St Petersburg 197183, Russia

[2] St Petersburg State Univ, Inst Chem, St Petersburg 198504, Russia

来源：

GLASS PHYSICS AND CHEMISTRY | 2017年 / 43卷 / 05期

基金：

俄罗斯基础研究基金会;

关键词：

interphase interfaces; double electric layer; internal photoeffect; PHASE-TRANSITION; CONDUCTIVITY; GLASSES; SYSTEM; FILMS; AGI;

D O I：

10.1134/S108765961705011X

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

A model is described, which makes it possible to calculate the distribution of nonequilibrium carriers and an electric field near the p-n junction, which arose as a result of the internal photoeffect. Using laser illumination, the possibilities to control the properties of nanolayered structures sensitive to the concentration of free carriers are analyzed. The mutual location of the region of the intense absorption of radiation and the p-n junction itself is varied and the linear and square mechanisms of carrier recombination are analyzed.

引用

页码：421 / 428

页数：8

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