Nondestructive diagnostics of microchannel (macroporous) silicon by X-ray topography

被引：7

作者：

Astrova, EV ^{[1
]}

Remenyuk, AD ^{[1
]}

Tkachenko, AG ^{[1
]}

Shul'pina, PL ^{[1
]}

机构：

[1] Russian Acad Sci, AF Ioffe Physicotech Inst, St Petersburg 194021, Russia

来源：

TECHNICAL PHYSICS LETTERS | 2000年 / 26卷 / 12期

基金：

俄罗斯基础研究基金会;

关键词：

Silicon; Mechanical Stress; Silicon Layer; Channel Depth; Nondestructive Monitoring;

D O I：

10.1134/1.1337262

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

It is demonstrated that X-ray topography can be used for imaging the boundary between a microchannel silicon layer and a substrate, evaluating the quality of this interface, determining the channel depth, and revealing mechanical stresses. This technique can be used for nondestructive monitoring of the structure of a microchannel layer at a spatial resolution of greater than or equal to5 mum. (C) 2000 MAIK "Nauka/Interperiodica".

引用

页码：1087 / 1090

页数：4

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