Yield shear stress dependence on nanoindentation strain rate in bulk GaN crystal

被引：25

作者：

Fujikane, Masaki ^{[1
]}

Yokogawa, Toshiya ^{[1
]}

Nagao, Shijo ^{[2
,3
]}

Nowak, Roman ^{[2
]}

机构：

[1] Panasonic Corp, Adv Devices Dev Ctr, 3-1-1 Yagumo Naka Machi, Moriguchi, Osaka 5708501, Japan

[2] Aalto Univ, Sch Sci & Technol, Nord Hysitron Lab, FI-00076 Aalto, Finland

[3] Norwegian Univ Sci & Technol, NTNU Nanomech Lab, N-7491 Trondheim, Norway

来源：

PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 8, NO 2 | 2011年 / 8卷 / 02期

关键词：

GaN; nanoindentation; strain rate; nanoscale deformation; DEFORMATION; INDENTATION; PLASTICITY;

D O I：

10.1002/pssc.201000604

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The strain rate controlled nanoindentation was performed in c-plane (0001) and m-plane (10-10) GaN crystals. The indentation velocity was ranged from 0.16 to 800 nm/s. The significant displacement bursts were detected after every perfect elastically deformations and they allowed us to calculate the maximum shear stress tau(max). The tau(max) dependences on strain rate in two crystal orientations involved that the two perpendicular compressions induced the same plastic deformation mechanism. Comparing the obtained tau(max) with the Peierls potential and maximum shear stress in each slip system, {10-11} < 11-20 > dislocation nucleation may support the origin of the plastic deformation in GaN crystal. (C) 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

引用

页码：429 / 431

页数：3

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