How to achieve efficiencies exceeding 22% with multicrystalline n-type silicon solar cells

被引：11

作者：

Schindler, Florian ^{[1
]}

Michl, Bernhard ^{[1
]}

Krenckel, Patricia ^{[1
]}

Riepe, Stephan ^{[1
]}

Benick, Jan ^{[1
]}

Mueller, Ralph ^{[1
,2
]}

Richter, Armin ^{[1
]}

Glunz, Stefan W. ^{[1
,2
]}

Schubert, Martin C. ^{[1
]}

机构：

[1] Fraunhofer Inst Solar Energy Syst ISE, Heidenhofstr 2, D-79110 Freiburg, Germany

[2] Univ Freiburg, Lab Photovolta Energy Convers, D-79110 Freiburg, Germany

来源：

7TH INTERNATIONAL CONFERENCE ON SILICON PHOTOVOLTAICS, SILICONPV 2017 | 2017年 / 124卷

关键词：

multicrystalline silicon; n-type; TOPCon; INTERFACE;

D O I：

10.1016/j.egypro.2017.09.086

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

In this contribution, we demonstrate a route for efficiencies exceeding 22% with n-type multicrystalline (mc) silicon solar cells based on the TOPCon cell concept featuring a boron-diffused front side emitter and a full-area passivating rear contact. By applying a "high-performance" (HP) crystallization process with an adapted seed structure in order to obtain an optimized grain boundary area fraction, we reduce recombination losses in the HP mc-Si material to a minimum. We discuss the electrical properties of the optimized n-type HP mc-Si, which features very low material-related efficiency losses of approximately 0.5%(abs) and, thus, enables an efficiency potential of 22.6% with regard to a cell limit of 23.1% of the TOPCon cell concept adapted for multicrystalline silicon. Results at the device level reveal a record efficiency of 21.9%, which is the highest efficiency reported for a multicrystalline silicon solar cell. Finally, we discuss the deviations between the predicted efficiency potential and the solar cell results. (C) 2017 The Authors. Published by Elsevier Ltd.

引用

页码：777 / 780

页数：4

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