Γ-X tunneling in GaAs/AlAs/GaAs heterostructure

被引：0
|
作者：
Khanin, Y [1 ]
Vdovin, E
Novoselov, K
Dubrovskii, Y
Omling, P
Carlsson, SB
Maan, JK
机构：
[1] Russian Acad Sci, Inst Microelect Technol & High Pur Mat, Chernogolovka 142432, Moscow District, Russia
[2] Univ Lund, S-22100 Lund, Sweden
[3] Catholic Univ Nijmegen, Mat Res Inst, High Field Magnet Lab, NL-6525 ED Nijmegen, Netherlands
来源：
PHYSICS OF LOW-DIMENSIONAL STRUCTURES | 1999年 / 1-2卷
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中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Tunneling via X valley related states is investigated in a GaAs/AlAs/GaAs single-barrier structures. Features in the tunnel current which are observed experimentally are associated with resonant tunneling through X-valley AlAs quantum well states derived from conduction band minima both perpendicular (X-x and X-y) and parallel (X-z) to the (100) growth direction and Si-donor states:linked to X valley. Tunnelling through impurity; states associated with X-z and X-x,X-y valleys is observed for the first time.
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页码：227 / 232
页数：6
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