Universal photoluminescence evolution of solution-grown ZnO nanorods with annealing: important role of hydrogen donor

被引：50
作者：
Huang, X. H. [1 ,2 ]
Tay, C. B. [1 ,2 ]
Zhan, Z. Y. [3 ]
Zhang, C. [1 ,4 ]
Zheng, L. X. [3 ]
Venkatesan, T. [1 ,2 ]
Chua, S. J. [1 ,2 ,4 ,5 ]
机构：
[1] Natl Univ Singapore, Fac Engn, Dept Elect & Comp Engn, Singapore 117576, Singapore
[2] Natl Univ Singapore, NUSNNI Nanocore Lab, Singapore 117576, Singapore
[3] Nanyang Technol Univ, Sch Mech & Aerosp Engn, Singapore 639798, Singapore
[4] Singapore MIT Alliance, Singapore 117576, Singapore
[5] Agcy Sci Technol & Res, Inst Mat Res & Engn, Singapore 117602, Singapore
来源：
CRYSTENGCOMM | 2011年 / 13卷 / 23期
关键词：
ZINC-OXIDE NANOSTRUCTURES; AQUEOUS-SOLUTION; THIN-FILMS; IDENTIFICATION; NANOPARTICLES; GAN;
D O I：
10.1039/c1ce05882g
中图分类号：
O6 [化学];
学科分类号：
0703 ;
摘要：
Poor near-band-edge emission (NBE) prohibits the application of solution-grown ZnO nanorods in optoelectronics, thus their photoluminescence (PL) was studied with respect to post-annealing temperature and duration. A universal behavior was revealed: NBE was enhanced by one order (or two) of magnitude after annealing in air (or H-2) at about 425 degrees C for 30 min, while the enhancement factor starts to decrease after annealing at higher temperatures. The evolution of PL was mainly ascribed to annealing-induced activation and dissociation of hydrogen donor, which was identified as H-O by both PL and Raman analyses. Results from nanorods with different diameters and annealing gases further support this assignment. The results provide new insights to understand and optimize the properties of solution-grown ZnO.
引用
收藏
页码：7032 / 7036
页数：5
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