Epitaxial lift-off of single crystalline CuI thin films

被引：3

作者：

Storm, Philipp ^{[1
]}

Selle, Susanne ^{[2
]}

von Wenckstern, Holger ^{[1
]}

Grundmann, Marius ^{[1
]}

Lorenz, Michael ^{[1
]}

机构：

[1] Univ Leipzig, Felix Bloch Inst Solid State Phys, Leipzig, Germany

[2] Fraunhofer Inst Microstruct Mat & Syst IMWS, Halle, Germany

来源：

JOURNAL OF MATERIALS CHEMISTRY C | 2022年 / 10卷 / 11期

关键词：

INDIUM ARSENIDE; SEMICONDUCTOR; GROWTH;

D O I：

10.1039/d2tc00083k

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Thin films of the transparent, p-type semiconductor copper iodide (CuI) were grown by pulsed laser deposition on SrF2(111) with water soluble sodium bromide (NaBr) sacrificial layers. The resulting epitaxial CuI thin films are single crystalline and offer reduced surface roughness compared to epitaxial CuI grown with rotational domains on other templates. The CuI thin films were transferred onto glass using epoxy/glue and dissolution of the NaBr in a water-vapor atmosphere.

引用

页码：4124 / 4127

页数：4

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