Effect of Modulation p-doping on the Optical Properties of Quantum Dot Laser Structure

被引：0

作者：

Hasbullah, N. F. ^{[1
]}

David, J. P. R. ^{[2
]}

Mowbray, D. J. ^{[3
]}

机构：

[1] Int Islamic Univ Malaysia, Dept Elect & Comp Engn, Kuala Lumpur, Malaysia

[2] Univ Sheffield, Dept Elect & Elect Engn, Sheffield S10 2TN, S Yorkshire, England

[3] Univ Sheffield, Dept Phys & Astron, Sheffield S10 2TN, S Yorkshire, England

来源：

MALAYSIA ANNUAL PHYSICS CONFERENCE 2010 (PERFIK-2010) | 2011年 / 1328卷

基金：

英国工程与自然科学研究理事会;

关键词：

modulation p-doping; optical; quantum dot; laser; electroluminescence; GROWTH-TEMPERATURE; THRESHOLD CURRENT; SPACER LAYER; DEPENDENCE;

D O I：

10.1063/1.3573710

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Temperature dependence electroluminescence (EL) measurements have been performed on In(Ga)As/ GaAs quantum dot (QD) structures with varying amounts of modulation p-doping. It is found that the IEL decreases with increasing temperature with the size of reduction decreases with increasing doping level. Activation energies derived from the temperature dependence results shows that the values increases with increasing doping. This is attributed to an increased Coulombic attraction between the extrinsic holes and injected electrons.

引用

页码：136 / +

页数：2

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