Design and simulation of P-TFET for improved ION/IOFF ratio and subthreshold slope using strained Si1-xGex channel heterojunction

被引：4
|
作者：
Choudhury, Sagarika [1 ]
Niranjan, Neeraj Kumar [1 ]
Baishnab, Krishna Lal [1 ]
Guha, Koushik [1 ]
机构：
[1] Natl Inst Technol Silchar, Dept Elect & Commun Engn, Silchar 788010, Assam, India
来源：
MICROSYSTEM TECHNOLOGIES-MICRO-AND NANOSYSTEMS-INFORMATION STORAGE AND PROCESSING SYSTEMS | 2020年 / 26卷 / 06期
关键词：
The performance of TFET is limited by low ON state tunnel current. This paper introduces a novel p-channel tunnel field effect transistor (TFET) which incorporates a hetero-structure channel layer made of Si/intrinsic—SiGe. Also; tensile strained Si1−xGex p-type channel is used which enhances the device characteristics; where x is the Ge-mole fraction. The proposed structure exhibits a very small subthreshold swing and a high ON–OFF current ratio. The device characteristics are improved on the basis of theoretical principles and simulation results. The structure is improvised to achieve higher values for ON-current as compared to previously reported structures in literature. The average value of subthreshold swing and ION-current are found to be 59 mV/dec and 10−5 A/µm. © 2019; Springer-Verlag GmbH Germany; part of Springer Nature;
D O I：
10.1007/s00542-019-04722-7
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The performance of TFET is limited by low ON state tunnel current. This paper introduces a novel p-channel tunnel field effect transistor (TFET) which incorporates a hetero-structure channel layer made of Si/intrinsic-SiGe. Also, tensile strained Si1-xGex p-type channel is used which enhances the device characteristics, where x is the Ge-mole fraction. The proposed structure exhibits a very small subthreshold swing and a high ON-OFF current ratio. The device characteristics are improved on the basis of theoretical principles and simulation results. The structure is improvised to achieve higher values for ON-current as compared to previously reported structures in literature. The average value of subthreshold swing and I-ON-current are found to be 59 mV/dec and 10(-5) A/mu m.
引用
收藏
页码：1777 / 1782
页数：6
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