Electronic structure and reflectance anisotropy spectrum of InAs(110) -: art. no. 125337

被引:5
作者
López-Lozano, X
Pulci, O
Noguez, C
Fleischer, K
Del Sole, R
Richter, W
机构
[1] Univ Nacl Autonoma Mexico, Inst Fis, Mexico City 01000, DF, Mexico
[2] Univ Autonoma Puebla, Inst Fis, Puebla 72570, Mexico
[3] Univ Roma Tor Vergata, INFM, I-00133 Rome, Italy
[4] TU Berlin, Inst Festkoerperphys, D-10623 Berlin, Germany
关键词
D O I
10.1103/PhysRevB.71.125337
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The electronic structure of the InAs(110) surface is investigated using several theoretical tools: semiempirical tightbinding, density functional theory, and perturbative many-body theory within the GW approximation. Comparison is made with available photoemission data. Moreover, we calculate the optical properties of this surface and perform reflectance anisotropy experiments. The tight-binding and especially the GW approximations provide a very good description of the optical spectra and allow for a more detailed analysis of the origin of the spectral features.
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页数:6
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