Size-Dependent Structures and Optical Absorption of Boron-Hyperdoped Silicon Nanocrystals

被引:69
作者
Ni, Zhenyi [1 ,2 ]
Pi, Xiaodong [1 ,2 ]
Zhou, Shu [3 ]
Nozaki, Tomohiro [3 ]
Grandidier, Bruno [4 ]
Yang, Deren [1 ,2 ]
机构
[1] Zhejiang Univ, State Key Lab Silicon Mat, Hangzhou 310027, Zhejiang, Peoples R China
[2] Zhejiang Univ, Sch Mat Sci & Engn, Hangzhou 310027, Zhejiang, Peoples R China
[3] Tokyo Inst Technol, Dept Mech Sci & Engn, Meguro Ku, Tokyo 1528550, Japan
[4] CNRS, Inst Elect Microelect & Nanotechnol, UMR 8520, Dept ISEN, 41 Bd Vauban, F-59046 Lille, France
关键词
PLASMON RESONANCES; QUANTUM DOTS; PHOSPHORUS; PASSIVATION; EFFICIENCY; ENERGY; YIELD;
D O I
10.1002/adom.201500706
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Hyperdoping silicon nanocrystals (Si NCs) is emerging as an effective means to obtain novel properties such as localized surface plasmon resonance (LSPR) from Si. Here it is shown that the physical properties and in particular the LSPR of boron (B)-hyperdoped Si NCs significantly change as the NC size decreases from 6.8 to 2.4 nm. While the largest Si NCs undergo a stronger reduction of the average lattice spacing upon doping with respect to the smallest ones, they suffer much less from disorder and show LSPR over a wider range of B concentration. As a result, by taking advantage of the tunability of the NC size and doping level, the LSPR energy can be changed, making attractive the development of novel Si structures and devices based on B-hyperdoped Si NCs.
引用
收藏
页码:700 / 707
页数:8
相关论文
共 58 条
[1]   BAND TAILS IN HYDROGENATED AMORPHOUS-SILICON AND SILICON-GERMANIUM ALLOYS [J].
ALJISHI, S ;
COHEN, JD ;
JIN, S ;
LEY, L .
PHYSICAL REVIEW LETTERS, 1990, 64 (23) :2811-2814
[2]   Superconductivity in doped cubic silicon [J].
Bustarret, E. ;
Marcenat, C. ;
Achatz, P. ;
Kacmarcik, J. ;
Levy, F. ;
Huxley, A. ;
Ortega, L. ;
Bourgeois, E. ;
Blase, X. ;
Debarre, D. ;
Boulmer, J. .
NATURE, 2006, 444 (7118) :465-468
[3]   STUDY OF THE LOCALIZED VIBRATIONS OF BORON IN HEAVILY DOPED SI [J].
CHANDRASEKHAR, M ;
CHANDRASEKHAR, HR ;
GRIMSDITCH, M ;
CARDONA, M .
PHYSICAL REVIEW B, 1980, 22 (10) :4825-4833
[4]   High-Efficiency Silicon Nanocrystal Light-Emitting Devices [J].
Cheng, Kai-Yuan ;
Anthony, Rebecca ;
Kortshagen, Uwe R. ;
Holmes, Russell J. .
NANO LETTERS, 2011, 11 (05) :1952-1956
[5]   Colloidal silicon quantum dots: from preparation to the modification of self-assembled monolayers (SAMs) for bio-applications [J].
Cheng, Xiaoyu ;
Lowe, Stuart B. ;
Reece, Peter J. ;
Gooding, J. Justin .
CHEMICAL SOCIETY REVIEWS, 2014, 43 (08) :2680-2700
[6]   Oxygen passivation of silicon nanocrystals: Influences on trap states, electron mobility, and hybrid solar cell performance [J].
Ding, Yi ;
Sugaya, Michihiro ;
Liu, Qiming ;
Zhou, Shu ;
Nozaki, Tomohiro .
NANO ENERGY, 2014, 10 :322-328
[7]   Silicon quantum dots: surface matters [J].
Dohnalova, K. ;
Gregorkiewicz, T. ;
Kusova, K. .
JOURNAL OF PHYSICS-CONDENSED MATTER, 2014, 26 (17)
[8]   Insulator-to-Metal Transition in Selenium-Hyperdoped Silicon: Observation and Origin [J].
Ertekin, Elif ;
Winkler, Mark T. ;
Recht, Daniel ;
Said, Aurore J. ;
Aziz, Michael J. ;
Buonassisi, Tonio ;
Grossman, Jeffrey C. .
PHYSICAL REVIEW LETTERS, 2012, 108 (02)
[9]   Disorder and Urbach energy in hydrogenated amorphous carbon: A phenomenological model [J].
Fanchini, G ;
Tagliaferro, A .
APPLIED PHYSICS LETTERS, 2004, 85 (05) :730-732
[10]   Plasmon Resonances of Semiconductor Nanocrystals: Physical Principles and New Opportunities [J].
Faucheaux, Jacob A. ;
Stanton, Alexandria L. D. ;
Jain, Prashant K. .
JOURNAL OF PHYSICAL CHEMISTRY LETTERS, 2014, 5 (06) :976-985