Laterally-current-injected light-emitting diodes based on nanocrystalline-Si/SiO2 superlattice

被引：14
作者：
Ding, L. [1 ]
Yu, M. B. [1 ]
Tu, Xiaoguang [1 ]
Lo, G. Q. [1 ]
Tripathy, S. [2 ]
Chen, T. P. [3 ]
机构：
[1] ASTAR, Inst Microelect, Singapore 117685, Singapore
[2] ASTAR, Inst Mat Res & Engn, Singapore 117602, Singapore
[3] Nanyang Technol Univ, Sch Elect & Elect Engn, Singapore 639798, Singapore
来源：
OPTICS EXPRESS | 2011年 / 19卷 / 03期
关键词：
SILICON; ELECTROLUMINESCENCE; DEVICES; LAYER;
D O I：
10.1364/OE.19.002729
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
Laterally electrically-pumped Si light-emitting diodes (LEDs) based on truncated nanocrystalline-Si (nc-Si)/SiO2 quantum wells are fabricated with complementary-metal-semiconductor-oxide (CMOS) process. Visible electroluminescence (EL) can be observed under a reverse bias larger than similar to 6 V. The light emission would probably originate from the spontaneous hot-carrier relaxations within the conduction and the valance bands when the device is sufficiently reverse-biased. The EL spectral profile is found to be modulated by varying structure parameters of the interdigitated finger electrodes. Up to similar to 20 times EL intensity enhancement is achieved as compared to vertical-current-injection LED prepared using the same material system. Based on the lateral-current-injection scheme, a Si/SiO2 MQW LED with Fabry-Perot (FP) microcavity and an on-chip waveguided LED that emits at 1.55-mu m are proposed. (C)2011 Optical Society of America
引用
收藏
页码：2729 / 2738
页数：10
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