Thermodynamics of the Si-O-N system .2. Stability of Si2N2O(s) by high-temperature mass spectrometric vaporization

被引:46
|
作者
Rocabois, P
Chatillon, C
Bernard, C
机构
[1] Lab. Thermodyn. Phys.-Chim. Metall., E.N.S.E.E.G., 38402 Saint Martin d'Hères
关键词
D O I
10.1111/j.1151-2916.1996.tb08597.x
中图分类号
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
The Si2N2O(s) compound is vaporized in a multiple Knudsencell connected to a mass spectrometer, Comparison of SiO(g) and N-2(g) pressures between different samples in the Si-N-O system, as triphasic or diphasic mixtures from Si(s), Si3N4(s), and Si2N2O(s), allows the determination of the SiO(g) evaporation coefficient and consequently the calculation of the equilibrium pressure of SiO(g), Then the standard enthalpy of formation of Si2N2O(s) is determined: Delta(f)H degrees(m)(Si2N2O, s, 298.15 K) = -887.5 +/- 10 kJ . mol(-1).
引用
收藏
页码:1361 / 1365
页数:5
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