Enhanced Environmental Stability Coupled with a 12.5% Power Conversion Efficiency in an Aluminum Oxide-Encapsulated n-Graphene/p-Silicon Solar Cell

被引：17
作者：
Yavuz, Serdar [1 ]
Loran, Erick M. [2 ]
Sarkar, Nirjhar [1 ]
Fenning, David P. [2 ]
Bandaru, Prabhakar R. [1 ,2 ]
机构：
[1] Univ Calif San Diego, Dept Mech Engn, Mat Sci & Engn, La Jolla, CA 92093 USA
[2] Univ Calif San Diego, Dept Nanoengn, La Jolla, CA 92093 USA
来源：
ACS APPLIED MATERIALS & INTERFACES | 2018年 / 10卷 / 43期
基金：
美国国家科学基金会;
关键词：
graphene; solar cell; Schottky junction; n-doping; stability; Raman spectroscopy; aluminum oxide; FIELD-EFFECT TRANSISTORS; WORK-FUNCTION; HIGH-PERFORMANCE; LAYER; FILMS; ANTIREFLECTION; DEPENDENCE; SCATTERING; TRANSPORT; PARAMETERS;
D O I：
10.1021/acsami.8b16322
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
A significant improvement in the power conversion efficiency (PCE) and the environmental stability of n-Graphene/p-Si solar cells is indicated through effective n-doping of graphene, using low work function oxide capping layers. AlOx, deposited through atomic layer deposition, is particularly effective for such doping and in addition serves as an antireflection coating and a cell encapsulating layer. It is shown that the related charge transfer doping and interfacial engineering was crucial to achieve a record PCE of 12.5%. The work indicates a path forward, through work function engineering, for further efficiency gains in Gr-based solar cells.
引用
收藏
页码：37181 / 37187
页数：7
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