Formation of ultrasmall germanium nanoislands with a high density on an atomically clean surface of silicon oxide

被引：8

作者：

Nikiforov, AI ^{[1
]}

Ul'yanov, VV ^{[1
]}

Pchelyakov, OP ^{[1
]}

Teys, SA ^{[1
]}

Gutakovsky, AK ^{[1
]}

机构：

[1] Russian Acad Sci, Inst Semicond Phys, Siberian Div, Novosibirsk 630090, Russia

来源：

PHYSICS OF THE SOLID STATE | 2005年 / 47卷 / 01期

关键词：

D O I：

10.1134/1.1853447

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The experimental results of an investigation into the initial stages of growth of a germanium film on an atomically clean oxidized silicon surface are reported. It is shown that the growth of the germanium film in this system occurs through the Volmer-Weber mechanism. Elastically strained nanoislands with a lateral size of less than 10 nm and a density of 2 x 10(12) cm(-2) are formed on the oxidized silicon surface. In germanium films with a thickness greater than 5 monolayers (ML), there also arise completely relaxed germanium nanoislands with a lateral size of up to 200 nm and a density of 1.5 x 10(9) cm(-2). (C) 2005 Pleiades Publishing, Inc.

引用

页码：67 / 70

页数：4

共 11 条

[1] Epitaxial growth of germanium dots on Si(001) surface covered by a very thin silicon oxide layer [J].

Barski, A ;

Derivaz, M ;

Rouvière, JL ;

Buttard, D .

APPLIED PHYSICS LETTERS, 2000, 77 (22) :3541-3543

[2] DISLOCATION-FREE STRANSKI-KRASTANOW GROWTH OF GE ON SI(100) [J].

EAGLESHAM, DJ ;

CERULLO, M .

PHYSICAL REVIEW LETTERS, 1990, 64 (16) :1943-1946

[3]

LANDER JJ, 1962, J APPL PHYS, V33, P2098

[4] Growth and structure of Ge nanoislands on an atomically clean silicon oxide surface [J].

Nikiforov, AI ;

Ul'yanov, VV ;

Pchelyakov, OP ;

Teys, SA ;

Gutakovskii, AK .

PHYSICS OF THE SOLID STATE, 2004, 46 (01) :77-79

[5] In situ RHEED control of self-organized Ge quantum dots [J].

Nikiforov, AI ;

Cherepanov, VA ;

Pchelyakov, OP ;

Dvurechenskii, AV ;

Yakimov, AI .

THIN SOLID FILMS, 2000, 380 (1-2) :158-163

[6] High-density ultrasmall epitaxial Ge islands on Si(111) surfaces with a SiO2 coverage [J].

Shklyaev, AA ;

Shibata, M ;

Ichikawa, M .

PHYSICAL REVIEW B, 2000, 62 (03) :1540-1543

[7] Reflection high-energy electron diffraction intensity oscillation during layer-by-layer oxidation of Si(001) surfaces [J].

Watanabe, H ;

Baba, T ;

Ichikawa, M .

APPLIED PHYSICS LETTERS, 1999, 74 (22) :3284-3286

[8] Controlled growth of SiO2 tunnel barrier and crystalline Si quantum wells for Si resonant tunneling diodes [J].

Wei, Y ;

Wallace, RM ;

Seabaugh, AC .

JOURNAL OF APPLIED PHYSICS, 1997, 81 (09) :6415-6424

[9] Formation of zero-dimensional hole states in Ge/Si heterostructures probed with capacitance spectroscopy [J].

Yakimov, AI ;

Dvurechenskii, AV ;

Nikiforov, AI ;

Pchelyakov, OP .

THIN SOLID FILMS, 1998, 336 (1-2) :332-335

[10] Ge/Si photodiodes with embedded arrays of Ge quantum dots for the near infrared (1.3-1.5 μm) region [J].

Yakimov, AI ;

Dvurechenskii, AV ;

Nikiforov, AI ;

Chaikovskii, SV ;

Tiis, SA .

SEMICONDUCTORS, 2003, 37 (11) :1345-1349

← 1 2 →